The courses are conducted under the guidance of a professor at the Department of Micro and Nanoelectronics at BSUIRBorisenko Viktor Evgenievich,Doctor of Physical and Mathematical Sciences, Professor, Scientific Director of the Center for Nanoelectronics and New Materials (Center 4.11 Research Institute of BSUIR), Co-chairman of the International Conference on Physics, Chemistry and Application of Nanostructures Nanomeeting (www.nanomeeting.org, held once every two years in Minsk since 1995), Privileged Physicist of the Institute of Physics (UK). Prepared 25 candidates and 5 doctors of science
Purpose of the course- formation of students' knowledge about the fundamental physical laws of phenomena in nano-sized solid-state structures, mainly on semiconductor materials, about technological methods for creating nano-sized structures (nanotechnology), about their electronic, magnetic, optical properties and about the possibilities of their application in integrated information processing systems.
As a result of mastering the course, the student should:
·         know what low-dimensional and nano-sized structures are, what technological methods are used to form them, what are their basic electronic and optical properties,  what electronic and optoelectronic devices can be created on their basis;
·         be able to characterize the effects that determine the electronic and optical properties of nano-sized structures and devices based on them, analyze the advantages and limitations of nanoelectronic devices in comparison with other electronic and optoelectronic devices;
·         acquire skills in selecting technological means for creating nanoelectronic devices, computer modeling of parameters of nanoelectronic devices.
Course program
Physical foundations of nanoelectronics
Fundamental phenomena in low-dimensional structures. Quantum limitation. Ballistic transport. Tunneling. Spin effects.
Elements of low-dimensional structures. Free surface and interphase boundaries. Superlattices. Simulation of atomic configurations.
Structures with quantum confinement by an internal electric field. Quantum wells. Modulation-doped structures. Delta-doped structures.
Structures with quantum confinement by an external electric field. Metal/dielectric/semiconductor structures. Split gate structures. Simulation of the quantum confinement effect.
Modeling of ballistic transport. Simulation of electron tunneling. Construction of periodic superlattices.
Nanotechnology
Traditional methods of film deposition. Chemical vapor deposition. Molecular beam epitaxy.
Methods using scanning probes. Physical foundations. Nuclear Engineering. Local oxidation of metals and semiconductors. Local chemical vapor deposition.
Nanolithography. Electron beam lithography. Profiling resists with scanned probes. Nanoprinting. Comparison of nanolithographic methods.
Self-regulating processes. Self-assembly. Self-organization in bulk materials. Self-organization during epitaxy.
Selection of reagents and modes of chemical vapor deposition. Selection of reagents and modes of molecular beam epitaxy. Probe technologies.
Nanostructured electronic materials
Porous silicon. Formation. Properties. Application in electronics.
Porous anodic aluminum oxide. Formation. Properties. Application in electronics.
Fullerenes and carbon nanotubes. Formation. Properties. Application in electronics.
Formation and study of porous silicon. Formation and study of porous anodic aluminum oxide.
Electronic properties of nano-sized structures, nano- and optoelectronic devices based on them
Transport of charge carriers along potential barriers. Interference of electron waves. Current-voltage characteristics of low-dimensional structures. Quantum Hall effect. Electronic devices based on interference effects.
Transport of charge carriers through potential barriers. Single-electron tunneling and electronic devices based on this effect. Resonance tunneling and electronic devices based on this effect.
Spintronics. Giant magnetoresistance. Spin-controlled tunneling. Control of electron spins in semiconductors. Kondo effect. Electronic devices based on spin effects.
Optical properties of low-dimensional structures and devices based on them. Features of the optical properties of low-dimensional structures. Lasers and light-emitting diodes. Radiation detectors.
Design of electronic devices based on interference effects. Design of electronic devices using single-electron tunneling. Design of spintronic devices. Design of optoelectronic devices.